Samsung is adding an extra layer of protection over its chip-stacking dominance by heavily investing in preparing new products.
The Korean brand is leading NAND memory production, and now it is gearing up to start mass production of a new type of memory chip by the end of this month. These V9 NAND chips boast 290 layers that represent the ninth generation of vertical NAND technology from Samsung.
The aim behind this decision appears to be to strengthen its dominance in the NAND memory market. This will authorize the brand to lead its opponent as the industry transitions to high-stacking and high-density flash memory. It seems that the V9 NAND is going to succeed the existing high-end 236-layer V8 NAND products from Samsung. The V9 NAND chips will essentially be used in large-scale enterprise servers, AI, and cloud solutions. The Korean giants are using its innovative double-stack technology for V9 NAND modules.
The reports are saying that Samsung will also be launching 430-layer NAND chips next year to meet the demand for high-performance and large storage devices, whereas the AI gold rush has led to an increase in demand and a boost in price for these memory devices. It is expected that the brand could unveil these 10-generation NAND chipsets by the end of this year.
It is reported that the giants are using their triple-stack technology to develop these modules. Technical limitations require the use of triple-stack technology to make this type of advanced chip. The NAND flash market is expected to rise 38.1% this year; meanwhile, Samsung is looking to cash in on that. The other competitive brands, such as SK Hynix, are also introducing their high-end NAND chips, with SK Hynix gearing up to mass produce its 321-layer NAND products in early 2025. Yangtze Memory is also actively working on producing 232-layer NAND chips and is also looking forward to launching its 300-layer chips later this year.
